PART |
Description |
Maker |
MG1041 MG1041-11 MG1042-11 MG1043-11 MG1044-11 MG1 |
23 GHz - 25 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE GUNN Diodes Anode Heat Sink
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
AD8361 AD8361ARM AD8361ARM-REEL AD8361ARM-REEL7 AD |
LF to 2.5 GHz TruPwrDetector SPECIALTY ANALOG CIRCUIT, PDSO6 LF to 2.5 GHz TruPwrDetector 低频.5 GHz TruPwr⑩探测器 LF to 2.5 GHz TruPwr⑩ Detector LF to 2.5 GHz TruPwr Detector LF to 2.5 GHz TruPwr?/a> Detector LF to 2.5 GHz TruPwr?Detector
|
Analog Devices, Inc. AD[Analog Devices]
|
ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
ATF-10100 ATF-10100-GP3 |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-26836-STR |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard...
|
ATF10736 |
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
|
ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136 |
ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
PE82P2000 |
Analog Phase Shifter, 5 GHz to 18 GHz, With an Adjustable Phase of 40 Deg. Per GHz and SMA
|
Pasternack Enterprises,...
|
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|